Download e-book for kindle: Materials Science and Technology by S. Hutagalung

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76466(6) y 0 0 0 z 0 0 1/2 Beq. 50(7) Table 3. Atomic paremeters of LGS, PGS and NGS. 23 Origin of Piezoelectricity on Langasite [001] c BL a2 [010] B AL A C a1 [100] Open space A a1 D [120] [100] (a) a1-a2 plane B site A site Ga3+(1a) octahedron La3+(3e) decahedron C B D Two layers (b) a1-c plane C site Ga3+(3f) tetrahedron D site 1/2Ga3+, 1/2Si4+(2d) tetrahedron (c) Four kinds of cation polyhedra. Fig. 8. Crystal structure of Langasite. (a) and (b) are viewed from [001] and [120], respectively.

On the one hand, there is the roughness of the interface that is determined by the roughness of the edges of the printed structures on the photomask. In a high quality photomask, this roughness is below the wavelength of light and hence negligible, unless an artificial roughness is created intentionally. This roughness would typically be on the micrometer scale, and it determines the length of the resulting interface and hence the area on which transport between the two conductors can occur. On the other hand, there is the length scale of the grain size of the respective conductors and of the average width of the gap between both conductors as a result of the pattern transfer process.

8. Conclusion Origin of piezoelectricity on Langasite has been explained based on the crystal structure, and clarified by crystal structure analysis under high pressure. In the introduction, the principle of piezoelectricity and present condition required such as Pb-free piezoelectricity are stated. Next, crystal growth of langasite, crystal structure analysis and piezoelectric properties of langasite are stated, and mechanism of piezoelectricity are presented based on the crystal structure and properties.

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