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From the Foreword, written through mythical nano pioneer M. Meyyappan, leader Scientist for Exploration know-how NASA Ames learn middle, Moffett box, California, united states: "…there is important desire for a ebook to summarize the prestige of the sector yet extra importantly to put out the foundations in the back of the know-how.
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76466(6) y 0 0 0 z 0 0 1/2 Beq. 50(7) Table 3. Atomic paremeters of LGS, PGS and NGS. 23 Origin of Piezoelectricity on Langasite  c BL a2  B AL A C a1  Open space A a1 D   (a) a1-a2 plane B site A site Ga3+(1a) octahedron La3+(3e) decahedron C B D Two layers (b) a1-c plane C site Ga3+(3f) tetrahedron D site 1/2Ga3+, 1/2Si4+(2d) tetrahedron (c) Four kinds of cation polyhedra. Fig. 8. Crystal structure of Langasite. (a) and (b) are viewed from  and , respectively.
On the one hand, there is the roughness of the interface that is determined by the roughness of the edges of the printed structures on the photomask. In a high quality photomask, this roughness is below the wavelength of light and hence negligible, unless an artiﬁcial roughness is created intentionally. This roughness would typically be on the micrometer scale, and it determines the length of the resulting interface and hence the area on which transport between the two conductors can occur. On the other hand, there is the length scale of the grain size of the respective conductors and of the average width of the gap between both conductors as a result of the pattern transfer process.
8. Conclusion Origin of piezoelectricity on Langasite has been explained based on the crystal structure, and clarified by crystal structure analysis under high pressure. In the introduction, the principle of piezoelectricity and present condition required such as Pb-free piezoelectricity are stated. Next, crystal growth of langasite, crystal structure analysis and piezoelectric properties of langasite are stated, and mechanism of piezoelectricity are presented based on the crystal structure and properties.