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By Ivan A. Parinov

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Therefore, in the case of implementation of the stimulated by radiation thermal annealing in the processing technology of integrated circuits and microsystems, we should carry out a careful control and selection of treatment regimes that would avoid dislocations [21, 22]. Figure 1. Spectral dependences of absorption (а), reflection (R) and transmission () coefficients for SiО2: 1  absorption, 2  transmission, 3  reflection. 22 V. V. Polyakov 2. 1. Characteristics of Processing SiO2 Films during Rapid Thermal Annealing In most cases, for forming the silicon dioxide films with stable electrical and physical parameters, a 1000-1200 ℃ temperature range is used [23, 24].

The adsorbed oxygen atom (adatom) is located as a bridge between two corner atoms of the Si zigzag chain, an additional oxygen atom is embedded into the back bond of one of the above-mentioned corner adatoms, bonded to the second layer of Si atoms (see Figure 7). The 100-120 nm thick ultrathin stoichiometric SiO2 layers are formed during thermal oxidation at 500, 600, 700 and 800 C [80]. The authors note, that the best values of such characteristics as dielectric constant, film density, root-mean-square roughness of the SiCSiO2 interface, effective oxide charge, leakage current density are observed during the oxidation at 700 C.

Processing Dielectric Thin Films SiO2 on SiC by Thermal Oxidation There is a lot of methods for processing the dielectric thin films on semiconductor surfaces [23, 36, 37, 39, 41  47]. Nowadays, several types of dielectric thin films on SiC have been extensively used in processing the SiC-based electronic devices. The oxidation of SiC and processing the nitride films on surface of SiC are commonly used. Thermal oxidation of SiC is usually carried out in dry oxygen, wet oxygen and water vapor [46, 48  63].

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