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By Eric Peeters

Advanced DPA thought and perform offers a radical survey of latest actual leakages of embedded platforms, particularly the facility and the electromagnetic emanations. The e-book provides an intensive research approximately leakage starting place of embedded procedure. This booklet examines the systematic strategy of different features and complex information about experimental setup for electromagnetic assault. the writer discusses complicated statistical easy methods to effectively assault embedded units reminiscent of high-order assault, template assault in vital subspaces, computer studying equipment. The publication contains theoretical framework to outline side-channel in response to metrics: mutual details and good fortune rate.

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Extra info for Advanced DPA Theory and Practice: Towards the Security Limits of Secure Embedded Circuits

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We generated simulated measurements, using the signed distance model. 17) and EM leakages (δ = 2). 4. We performed the correlation phase. The results of the simulated attacks are in Fig. 13, where it is clearly observed that the correct key candidate can be recovered and that the EM measurements are significantly more efficient (see the scale difference). In accordance with the comparisons we made in the previous sections between predictions and measurements, one can say that the reported simulated attacks (Fig.

Berlin: Springer [Waltersub99] Koç, Ç. , & Paar, C. ). (2000). Cryptographic hardware and embedded systems—CHES 2000, Second International Workshop, Worcester, MA, USA, August 17–18, Proceedings, of Lecture Notes in Computer Science (Vol. 1965). Berlin: Springer. -J. (2003). Parallel FPGA implementation of RSA with residue number systems—can side-channel threats be avoided? In MWSCAS ’03. Proceedings of the 46th IEEE International Midwest Symposium on Circuits and Systems (Vol. 2, pp 806–810), Dec 2003.

9 in order to obtain an simpler structure that allows us to understand its effect on the inner current. e. the power supply PDN of the analog part which has not a significant impact on the inner digital current), we obtain the scheme depicted in Fig. 10. After computation we obtain the lumped elements: L lump = 3/4L Vcc4 and Rlump = RVcc4 /2 + RGnd/2. Note that Voscillo is the voltage monitored with the oscilloscope. 4) 52 4 Measurement of the Power Consumption Fig. 5) Finally, obtaining the inner current (Iin ) from the external one (Iout ) requires a fast fourier transform (FFT) of the latter which yields Iout (ω).

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